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Wolfspeed’s Cghv96100f2

Details
Posted By:
alex kosh
Posting ID:
6385g0753
Location:
Los Angeles
Telephone:
8882454658
Tags:
 transistor   band   fet   hemt 
Price:$717
Item Category:Electronics
Brand:Cree
Model / Serial #:Cghv96100f2
Condition:New
Address:
Los Angeles, CA 90014

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Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

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